PHOIBOS 100 MCD5 (inkl. PHOIBOS 100-63 MCD)

High-performance Hemipsherical Energy Analyzer with MCD detector for UPS, XPS, ISS and LEISS. 

The PHOIBOS 100 Hemispherical Energy Analyzer is a powerful tool for modern photoelectron spectroscopy. This analyzer can be operated in all relevant analysis modes, such as XPS, UPS, as well as AES, ISS and LEISS. Its design and the modular supplementary hardware makes this analyzer the most versatile PES analyzer in the market. It can easily be upgraded with all available SPECS detection systems. 

The integrated MCD-5 (5 channel multi channeltron detector) detector is a well established and robust detection solution. The direct detection of electron signals yield quantitative counts per second (cps). With 5 simultaneous channels aquisition with high count rates can be guaranteed.

The energy analyzer section is equipped with 8 customizable entrance and 3 exit slits for UPS and XPS. The analyzer comes with a highly stable power supply, the HSA 3500 plus, for best performance in a wide kinetic energy range up to 3500 eV.

A special version with a smaller lens diamater (DN63CF) is available on request.

KEY FEATURES

  • Robust and Performant Analyzer for XPS, UPS, AES, ISS and LEIS
  • 100 mm Mean Radius
  • Quantitative Analysis
  • High Count Rate and Linearity
  • 5 Simultaneous Energy Channels
  • Robust Detector Technology
  • Double µ-Metal Shielding

MADE FOR THESE METHODS

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APPLICATION NOTES

PUBLICATIONS

  1. (2018) Apparatus for dosing liquid water in ultrahigh vacuum

    The structure of the solid-liquid interface often defines the function and performance of materials in applications. To study this interface at the atomic scale, we extended an ultrahigh vacuum (UHV) surface-science chamber with an apparatus that allows bringing a surface in contact with ultrapure liquid water without exposure to air. In this process, a sample, typically a single crystal prepared and characterized in UHV, is transferred into a separate, small chamber. This chamber already contains a volume of ultrapure water ice. The ice is at cryogenic temperature, which reduces its vapor pressure to the UHV range. Upon warming, the ice melts and forms a liquid droplet, which is deposited on the sample. In test experiments, a rutile TiO2(110) single crystal exposed to liquid water showed unprecedented surface purity, as established by X-ray photoelectron spectroscopy and scanning tunneling microscopy. These results enabled us to separate the effect of pure water from the effect of low-level impurities present in the air. Other possible uses of the setup are discussed.



    J. Balajka, J. Pavelec, M. Komora, M. Schmid, U. Diebold
    Review of Scientific Instruments 89, 083906
    Read more
  2. (2004) 8% efficient CuInS2 solar cells by electrochemically removed Cu-S Phases

    Investigations on how to replace the toxic KCN etching for the removal of Cu–S phases during the preparation of CuInS2 (CIS) absorber layers by electrochemical procedures are presented. Starting from a simple anodic treatment in V2+/V3+ electrolyte, a more complex photoelectrochemical technique is developed which consists of different consecutive etching steps for the dissolution of the predominant CuS and for the removal of remaining Cu2S and a small sacrificial layer of CuInS2. This new method also offers the possibility of in situ quality control of the CIS in a photoelectrochemical solar cell (PECS) setup. Further examination of the treated films is carried out using X-ray emission spectroscopy, X-ray photoelectron spectroscopy (XPS) and by further processing of the samples to create solid state solar cells.



    T. Wilhelm, B. Berenguier, M. Aggour, K. Skorupska, M. Kanis, M. Winkelnkemper, J. Klaer, C. Kelch, H. J. Lewerenz
    Thin Solid Films 480-481, pp. 24-28
    Read more
  3. (2004) Band line-up at the 4H-SiC/Ni interface determined with photoemission spectroscopy

    The band line-up at the 4H-SiC/Ni interface was determined using X-ray photoemission spectroscopy (XPS). Ni was deposited in 14 steps on an ex situ cleaned n-type 4H-SiC substrate starting with an initial deposition of 0.5 Å up to a final thickness of 110 Å. The sample surface was characterized in situ by XPS before the growth sequence, and after each Ni deposition step. Analysis of the Ni 3d and O 1s core level peaks indicates that a thin Ni oxide layer was formed at the interface due to a chemical reaction with oxidizing agents on the sample surface due to the ex situ substrate preparation before a metallic Ni film could be grown. The substrate core level spectra exhibit a significant shift to lower binding energy due to the development of an inversion condition in the semiconductor at the interface. This resulted in the formation of an electron injection barrier of 3.26 eV at the interface.



    M. M. Beerbom, Z. Bednarova, R. Gargagliano, Y.N . Emirov, R. Schlaf
    Applied Surface Science 236 (1-4), pp. 208-216
    Read more

SPARE PARTS

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Product image
Product description
Article No.
 
5-Channeltron-Detection Unit for PHOIBOS 100

Refurbished and tested MCD-5 detector for PHOIBOS 100

2011500451
Channeltron-Array set (5)

Replacement for 5-channel channelron detector MCD-5 for PHOIBOS 100

2079150301
Cu gasket DN370CF for PHOIBOS 100

PHOIBOS 100 analyzer main flange gasket for Releases R3, R6, R7

2060000572
Cu gasket for PHOIBOS 100

PHOIBOS 100 analyzer main flange gasket for Releases R5

2070000338
Rotary feedthrough for IRIS

Replacement feedthrough for PHOIBOS Release R5 & R6 iris mechanism

2060001175
Spindle with Spur and Bevel Gear for Iris

Replacement spindle for PHOIBOS Release R5 & R6 iris mechanism

2055021656
Tubus 3 with Iris

Replacement iris mechanism for PHOIBOS Release R5 & R6

2079150291