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PCS-ECR-IO

Microwave  Ion Plasma Cracker Source for Oxygen or Reduced Oxygen Gases for Most Demanding MBE Applications

The microwave ion plasma source for oxygen or oxydizing gases PCS-ECR-IO is a fully UHV compatible component for most demanding MBE applications and surface modifications, suitable for a wide range of vacuum levels (UHV to HV). Microwaves with a frequency of 2.45 GHz are generated by a microwave magnetron and coupled into the plasma chamber, where a plasma is excited and the microwaves absorbed. The plasma density is enhanced by the magnetron cyclotron resonance effect, provided by a 86 mT magnetic quadrupole arranged around the plasma chamber. The electrons undergo electron cyclotron resonance (ECR) motion, which greatly enhances the electron path length and therefore the probability of collision with other molecules and subsequent ionisation.The charged particles are actively extracted from the plasma and accelerated towards the sample by application of an accelerating voltage. To avoid recombination of the ions and electrons, the source is equipped with metallic grids that have larger holes than the apertures in atom mode. The kinetic energy of the extracted ions is considerably higher than that of the neutral particles in atom mode, which allows implantation into deeper layers of the sample or sputtering of surface layers. 

The source is fully bakeable, with an all-welded stainless steel vacuum envelope, and outstanding cooling from a full length water-jacket.With additional sets of the user-exchangeable apertures and extraction grids, the source can be easily reconfigured for oxidizing gases, as a downstram plasma source or as a dedicated atom or ion source.

KEY FEATURES

  • Filamentless design permits operation with reactive gases.
  • No microwave tuning required
  • Unique integrated shutter and current monitor option.
  • Trivial bakeout preparation ~1 minute
  • Integral water cooling jacket

MADE FOR THESE METHODS

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SPECIFICATIONS

PCS-ECR-IO
Operation
Working Principle

Microwave assisted plasma source

Max. Power

250 W max. at 2.45 GHz

Gas Flow Rate

< 0.1 sccm to 100 sccm (mode dependant)

Operating Modes

Ion mode

Operating Pressure

< 10-7 - 10-5 mbar

Optional Accessories

  • Integrated shutter
  • Non standard lengths
  • Various aperture types
  • Differential pumping
  • Faraday cup: Provides the possibility to monitor the beam current
  • Ion trap: Deflects residual ion current out of the beam<
  • Mounting
    Mounting Flange

    NW63CF (4.5 ")

    Insertion Depth

    300 mm

    Performance
    Spot Size

    ~25 mm at source

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