Microwave Ion Plasma Cracker Source for Oxygen or Reduced Oxygen Gases for Most Demanding MBE Applications
The microwave ion plasma source for oxygen or oxydizing gases PCS-ECR-IO is a fully UHV compatible component for most demanding MBE applications and surface modifications, suitable for a wide range of vacuum levels (UHV to HV). Microwaves with a frequency of 2.45 GHz are generated by a microwave magnetron and coupled into the plasma chamber, where a plasma is excited and the microwaves absorbed. The plasma density is enhanced by the magnetron cyclotron resonance effect, provided by a 86 mT magnetic quadrupole arranged around the plasma chamber. The electrons undergo electron cyclotron resonance (ECR) motion, which greatly enhances the electron path length and therefore the probability of collision with other molecules and subsequent ionisation.The charged particles are actively extracted from the plasma and accelerated towards the sample by application of an accelerating voltage. To avoid recombination of the ions and electrons, the source is equipped with metallic grids that have larger holes than the apertures in atom mode. The kinetic energy of the extracted ions is considerably higher than that of the neutral particles in atom mode, which allows implantation into deeper layers of the sample or sputtering of surface layers.
The source is fully bakeable, with an all-welded stainless steel vacuum envelope, and outstanding cooling from a full length water-jacket.With additional sets of the user-exchangeable apertures and extraction grids, the source can be easily reconfigured for oxidizing gases, as a downstram plasma source or as a dedicated atom or ion source.
Aperture for PCS-ECR
Electrical feedthrough for PCS-ECR
PCS-RF-ReconAN Reconfiguration Set including Bornitrit aperture, plasma tube and connectors
Silicon heat conducting paste for PCS-ECR 25g5W/mK, QC-WLP-CQ-08