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PHOIBOS 100 2D-CMOS/-CCD

Hemispherical Energy Analyzer with 2D CMOS Detector for XPS, ARPES, ISS and LEISS with 100 mm Mean Radius

The PHOIBOS 100 hemispherical energy analyzer is the state-of-the-art analysis solution for photoelectron spectroscopy with high high csystem compatibility. This analyzer can be operated in all relevant analysis modes, such as ARPES, XPS, UPS, as well as AES, ISS and LEISS. Its design and the modular supplementary hardware makes this analyzer the most versatile PES analyzer in the market.

With a 2D CMOS detector is shows outstanding performance in countrate, linearity and a true pule counting mechanism. It combines a state of the art lens system with a proven hemipshere design for highest transmission and resolution. The analyzer can be operated in transmission (XPS/UPS), angular resolved (ARPES) and magnification mode (slab imaging).

The energy analyzer sectionis equipped with 8 customizable entrance and 3 exit slits. For highest energy resolution the entrance slit can be chosen down to 50 µm, providing achievable energy resolution better than 1.8 meV. The analyzer comes with a highly stable power supply, the HSA 3500 plus, for best performance in a wide kinetic energy range.

A classical CCD camera detection system is available on request. A special version with a smaller lens diamater (DN63CF) is available on request.

KEY FEATURES

  • High Performance Analyzer for XPS, ARPES, AES, ISS and LEIS
  • 100 mm Mean Radius
  • Energy resolution better than 3 meV
  • Angular Resolution better than 0.1°
  • 2D MCP Chevron Detector with CMOS (or CCD)
  • Double µ-Metal Shielding
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MADE FOR THESE METHODS

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SPECIFICATIONS

PHOIBOS 100 2D-CMOS/-CCD
Performance
Energy Resolution

< 3 meV

Angular Resolution

< 0.1°

k-Resolution

N/A

Acceptance Angle

±15°, ±7°, ±4° and ±3°

Lateral Resolution

< 40 µm

Smallest Acceptance Spot

100 µm

XPS Count Rates UHV

tba

Detector Channels

1900 x 1200 (with Channel Binning)

Operation
Kinetic Energy Range

0-3500 eV

Pass Energies

0-550 eV Continously Adjustable

Energy Dispersion

Hemisphere

Lens Modes

Transmission Mode, Angular Resolved Mode, Magnification (Lateral Resolved) Mode

Measurement Modes

Snapshot Mode, Sweeping Mode, Fixed Energy Mode

Detector

2D CMOS Detector

Slits/Apertures

8 entrance and 3 exit slits and iris aperture

Energy Window

20% of Pass Energy

Electronics

HSA 3500 +

Working Pressure

10-11 to 10-7 mbar

Mounting
Working Distance

40 mm

Mounting Flange

DN100CF (6" OD)

Electric Isolation

> 3.5 keV

Magnetic Shielding

Double µ-Metal Shielding

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RELATED PRODUCTS

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APPLICATION NOTES

Ultimate Energy Resolution of the PHOIBOS 100 CCD
Ultimate Energy Resolution of the PHOIBOS 100 CCD
We have measured the line width of the Xe 5p3/2gas line using the SPECS gas cell UGC 10 and the SPECS UV-light source UVS 300. The special geometry of the cell includes space charge compensation electrodes to demonstrate the ultimate energy resolution of the PHOIBOS 100 analyzer together with the 2D-CCD Imaging Detector.
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Quantum Size Effects in uncoupled Al layers on graphitized SiC
Quantum Size Effects in uncoupled Al layers on graphitized SiC
track Quantum well states, measure 2D band structure, parallel component of wave vector, 2D spectrometer use
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Measurements of the Surface State of Au (111)
Measurements of the Surface State of Au (111)
The band structure of the (111) surface of Au was measured by high-resolution angle-resolved photoelectron spectroscopy. The experiments were performed using a SPECS UV 10/35 source, which has an energy resolution of about 2 meV and a spot size of about 1.5 mm diameter. The photon energy for all measurements was 21.23 eV (He I).
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Measurements of the Surface State of Cu (111)
Measurements of the Surface State of Cu (111)
The band structure of the (111) surface of Cu was measured by high-resolution angle-resolved photoelectron spectroscopy. The experiments were performed using a VG UV source, which has an energy resolution of about 2 meV and a spot size of about 1.5 mm diameter. The photon energy for all measurements was 21.23 eV (He I).
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Fermi-edge of a single crystal TiTe2 sample at low temperature
Fermi-edge of a single crystal TiTe2 sample at low temperature
The Fermi-edge of a single crystal TiTe2sample was measured at low temperature. The diode closest to the sample read 12 K. A sample temperature of 17 K was estimated. The data was taken with a PHOIBOS 150 CCD analyzer at 3 eV pass energy and with 0.2 mm slit width.
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Band Structure of Crystalline Graphite Layers on SiC (0001)
Band Structure of Crystalline Graphite Layers on SiC (0001)
The band structure of crystalline graphite layers on the (0001) surface of SiC was measured by high-resolution angle-resolved photoelectron spectroscopy. The experiments were performed using a SPECS UV source 10-35, which has an energy resolution of about 2 meV and a spot size of about 0.6 mm in diameter. The photon energy for all measurements were 40.81 eV (He II).
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High Angular Resolution Data from the Band Structure of Thin Layers of Indium on Si(111)
High Angular Resolution Data from the Band Structure of Thin Layers of Indium on Si(111)
The band structure of thin layers of indium on Si(111) was measured with ARPES. Due to electron confinement in the direction perpendicular to the surface, quantum well states (QWS) are formed. The experiments were performed at the BESSY II 10 m NIM beamline at the U125/2 undulator, which has an energy resolution of less than 1 meV, and a small spot size.
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Cross Section through the Brillouin Zone of Pb 2D Quantum Well State Bands
Cross Section through the Brillouin Zone of Pb 2D Quantum Well State Bands
Examining unexpected properties of Pb, a free electron metal
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Overlayer Quantum Well States
Overlayer Quantum Well States
Angle-resolved one-photon photoemission was used to investigate angular resolved photoemission from Ag overlayers on Cu(111).
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Resolving Power of the PHOIBOS Energy Analyzer Series
Resolving Power of the PHOIBOS Energy Analyzer Series
The line width of Xe and other rare gas levels using the SPECS gas cell UGC 10 and the SPECS UV-light source UVS 10/35 has been measured. The special geometry of the cell includes space charge compensation electrodes to demonstrate the ultimate energy resolution of the PHOIBOS analyzers.
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PHOIBOS 150 2D-CCD Wide Angle Mode in 2PPE
PHOIBOS 150 2D-CCD Wide Angle Mode in 2PPE
These notes describe the application of the angular resolving wide angle lens mode (WAM) in two-photon-photoemission spectroscopy (2PPE).
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Two-Photon-Photoemission
Two-Photon-Photoemission
This Note shows the one- and two-photon photoemission signal of the Cu(111) surface state at 300 K for the different angular resolved lens modes of the PHOIBOS analyzer at different pass energies Ep. The surface has been analyzed using a PHOIBOS 150 analyzer with the 2D CCD Detector.
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PUBLICATIONS

  1. (2006) Electron localization in metallic quantum wells: Pb versus In on Si(111)

    Two-dimensional quantum well states in ultrathin metal films generally exhibit a dispersion relation of s-p-derived states that can be described through an effective mass of the corresponding bulk band. By contrast, the effective masses in Pb quantum well states on Si(111), measured through angle-resolved photoemission, are up to an order of magnitude larger than those from the bulk states or predicted by slab calculations, while similar anomalies are not observed in the related In∕Si(111) system. We interpret these data in terms of an enhanced electron localization, and use them to interpret recent scanning tunneling microscopy results.



    J. H. Dil, J. W. Kim, Th. Kampen, K. Horn, A. R. H. F. Ettema
    Physical Review B 73, 161308 (R)
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  2. (2006) Quantum-Well Wavefunction Localization and the Electron-Phonon Interaction in thin Ag Nanofilms

    The electron-phonon interaction in thin Ag nanofilms epitaxially grown on Cu(111) is investigated by temperature-dependent and angle-resolved photoemission from silver quantum-well states. Clear oscillations in the electron-phonon coupling parameter as a function of the silver film thickness are observed. Different from other thin film systems where quantum oscillations are related to the Fermi-level crossing of quantum-well states, we can identify a new mechanism behind these oscillations, based on the wave-function localization of the quantum-well states in the film.



    S. Mathias, M. Wiesenmayer, M. Aeschlimann, M. Bauer
    Phys. Rev. Lett. 97, 236809
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  3. (2004) Self-organization of Pb thin films on Cu(111) induced by quantum size effects

    Electron confinement in thin films of Pb on Cu(111) leads to the formation of quantum well states, formed out of the upper valence band of Pb. Their evolution as a function of film thickness is characterized in angle-resolved photoemission and can be interpreted in terms of a straightforward quantum well model. This permits an identification of film growth mode at low temperatures. Bringing the films into thermal equilibrium by annealing induces strong changes in the spectra. Their interpretation demonstrates that specific “magic” layers are preferred because of total energy minimization induced by the arrangement of quantum well states with respect to the Fermi level.



    J. H. Dil, J. W. Kim, S. Gokhale, M. Tallarida, K. Horn
    Phys. Rev. B 70, pp. 045405-1 - 045405-5
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SPARE PARTS

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Product image
Product description
Article No.
 
Channelplates Set - 1 pair MCP 40

Spare channelplate set for all 40 mm CCD detectors

2060009045
Phosphor screen

Spare phosphor screen for all 40 mm CCD detectors. Exchange with channelplates is recommended.

2060008804
Cu gasket DN370CF for PHOIBOS 100

PHOIBOS 100 analyzer main flange gasket for Releases R3, R6, R7

2060000572
Cu gasket for PHOIBOS 100

PHOIBOS 100 analyzer main flange gasket for Releases R5

2070000338
Rotary feedthrough for IRIS

Replacement feedthrough for PHOIBOS Release R5 & R6 iris mechanism

2060001175
Spindle with Spur and Bevel Gear for Iris

Replacement spindle for PHOIBOS Release R5 & R6 iris mechanism

2055021656
Tubus 3 with Iris

Replacement iris mechanism for PHOIBOS Release R5 & R6

2079150291
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