EnviroMETROS FAB
All about the layers
As semiconductor coatings and multilayer stacks become thinner and more complex, accurate characterization of layer thickness, composition and buried interfaces becomes increasingly important. Conventional sputter depth profiling can modify delicate structures through ion-induced damage, layer mixing or chemical changes.
Surface and interface X-ray metrology
The full-wafer metrology tool EnviroMETROS FAB supports FEOL process control and development prior to patterning. It enables gate-stack characterization, thickness and material verification of TiN, HfO₂, and interfacial oxides, as well as quality control of Si₃N₄/SiCN hardmasks before lithography. The tool can also be used to evaluate Si₃N₄ and SiO₂ spacer films, optimize high-k/metal-gate processes, ALD cycles, annealing conditions, and work-function layers, and monitor NiSi/CoSi₂ silicide formation and SiGe/SiC epitaxy consistency. This provides rapid feedback for process monitoring and optimization in R&D and manufacturing environments.
Performance highlights
- Enables full characterization of FEOL blanket stacks without preparation or structural damage
- Distinguishes Si3N4, TiN, HfO2, SiO2, and Si with high chemical sensitivity, even in ultrathin layers
- Provides reliable quantification of critical films such as high-k dielectrics (1 – 4 nm) and metal gate layers (5 – 10 nm)
- Differentiates interfacial oxides, chemical gradients, and subtle variations in film quality
- Resolves complex FEOL stacks including hardmask, metal gate, high-k, interfacial oxide, pad oxide
PARXPS – the unique technique for advanced metrology
Advanced CMOS integration requires sub-Nanometer control of complex stacks containing for example SiO2, HfO2, TiN and Si3N4. Common semiconductor metrology methods such as spectroscopic ellipsometry and optical reflectometry provide limited direct chemical-state sensitivity, while SIMS, sputter depth profiling and cross-sectional TEM require material removal or extensive sample preparation that may alter or destroy the Region under investigation.
Non-destructive Parallel Angle Resolved X-ray Photoelectron Spectroscopy (PARXPS) simultaneously measures electrons across multiple emission angles, providing Information on layer thickness, composition, oxidation state, nitridation and interface chemistry. Combining PARXPS with multiple X-ray Energies progressively increases the photoelectron Information depth. Surface-sensitive XPS resolves the uppermost layers, while higher-energy HAXPES (Hard X Ray Photoelectron Spectroscopy) probes through capping layers toward deeper films and buried FEOL interfaces, enabling a more complete chemical depth profile without sputtering.
Multi-technique options
The system can be equipped with a range of complementary techniques, all controlled through a unified software interface, to provide a comprehensive analysis of complex materials.
XPS and HAXPES reveal elemental composition, chemical states and bonding environments from the surface down to capped layers and buried interfaces. PARXPS provides non-destructive information on the depth distribution, composition and thickness of ultra-thin layers without sample sputtering or tilting. Sputter depth profiling enables analysis of thicker structures, while LEISS identifies the elemental composition and termination of the outermost atomic layer. For electronic structure characterization, UPS measures work function, valence-band structure and occupied states, complemented by IPES for unoccupied states and conduction-band or LUMO positions. REELS provides bandgap related and dielectric information. IRRAS and Raman spectroscopy reveal functional groups, molecular vibrations, crystalline phases, defects, strain and material transformations. SEM and SAM add surface morphology, microstructure and spatially resolved elemental information, creating a comprehensive and directly correlated view of the sample.