EnviroMETROS FAB
EnviroMETROS FAB is a fully automated XPS wafer metrology system for advanced surface analysis in semiconductor manufacturing. Designed for reliable, non-destructive measurement of wafers, it enables precise analysis of surface composition, thin films, chemical states, and contamination. Automated wafer handling and measurement workflows deliver consistent results, making EnviroMETROS FAB a powerful solution for process development, quality control, and semiconductor production.
EnviroMETROS FAB meets the evolving demands of semiconductor metrology by enabling non-destructive XPS depth profiling of ultra-thin films and multilayer stacks. It preserves the original wafer while providing reliable depth information for semiconductor research, process development, and quality control. Automated wafer handling supports standard 200 mm (8″) or 300 mm (12″) wafers, with an optional FOUP loader and EFEM for 300 mm wafer automation. EnviroMETROS FAB is available as a stand-alone system or as an inline XPS wafer metrology solution for integration into semiconductor production environments.
Model Comparison
The EnviroMETROS FAB is equipped with a monochromatic four energy line X-ray source enabling fast acquisition of high-quality spectra from welldefined analysis areas. The LAB configuration is also compatible with Near-Ambient Pressure (NAP) measurements.
X-ray source
- Up to 4 switchable X-ray excitation lines (Al Kα, Ag Lα, Ti Kα, Cr Kα)
- Spot sizes: Al Kα and Ag Lα: < 100 μm to 500 μm;
Ti Kα: < 150 μm to 500 μm;
Cr Kα: < 200 μm to 500 μm
Pressure
- UHV (< 5 × 10-10 mbar)
- Upgradable to NAP conditions (up to 50 mbar)
The EnviroMETROS μFAB is equipped with a monochromatic multi-color X-ray source with a scannable small spot size. This level of spatial resolution enables chemical-state mapping and small-area analysis on heterogeneous samples, microstructured devices, and individual features.
X-ray source
- Up to 3 switchable X-ray excitation lines (Al Kα, Ag Lα or Ti Kα, Cr Kα)
- Spot sizes: Al Kα and Ag Lα: < 10 μm to 300 μm;
Ti Kα and Cr Kα: < 25 μm to 300 μm - Scannable: 2 × 2 mm
Pressure
- UHV (< 5 × 10-10 mbar)
SPECIFICATIONS
| System |
|
| Sample introduction | • Wafer handler system for standard wafer sizes 200 mm (8″) or 300 mm (12″) |
| Electron spectrometer |
|
| X-ray source |
|
