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PCS-RF-AO

Radio Frequency Atom Plasma Cracker Source for Oxygen or other Reduced Oxygen Gases for most demanding MBE Applications

The radio frequency atom plasma source for oxygen or other oxidizing gases PCS-RF-AO is a fully UHV compatible component for most demanding MBE applications and surface modifications, suitable for a wide range of vacuum levels (from UHV to HV). A RF current with 13.56 MHz is generated by the RF power supply and fed into a RF coil that surrounds the plasma tube in the source. The corresponding RF field is inductively coupled into the plasma tube and plasma is generated from the gas molecules inside the plasma discharge tube. High RF powers lead to very high power density in the plasma and thus highest possible cracking efficiencies.

The different modes of the PCS-RF source are defined by the type of aperture used. For the atom-oxygen mode, a specially designed aperture inhibits the release of ions from the plasma while allowing neutral oxygen atoms to effuse out.The particles emitted from the source are largely thermalized ( <1 eV) and therefore, this plasma source is suitable for sensitive samples. The atoms produced with very low kinetic energies allow them to be used in sensitive surface treatments or material growth where higher energy particles may implant in the surface or otherwise disturb the crystallinity of the growing/treated layer.

Some application examples for this source are in the field of HTc superconductors, optical coatings, dielectrics, reactive sputtering, laser ablation and ceramic growth, oxygen cleaning and oxidation kinetics, post growth oxidation/ low temperature SiO2, growth enhancement / surfactant, etc.

The source is fully bakeable with outstanding cooling from a full length water-jacket. With additional sets of the user-exchangeable extraction grids or aperture plates, the source can be easily reconfigured for reducing gases or as an ion source, downstream plasma source or hybrid source.

KEY FEATURES

  • Filamentless design permits operation with reactive gases
  • Low damage surface treatment
  • Optimal sample growth
  • High stability and deposition control
  • High gas cracking efficiency
  • Low operation pressures
  • Low kinetic energies (<1 eV) suitable for  sensitive surface treatment

MADE FOR THESE METHODS

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SPECIFICATIONS

PCS-RF-AO
Operation
Working Principle

Radio Frequency assisted plasma source

Max. Power

500 W max. at 13.56 MHz

(400W for oxygen and hydrogen)

Gas Flow Rate

< 0.1 sccm to 100 sccm (mode dependant)

Operating Modes

Atom mode

Operating Pressure

< 10-7 - 10-5 mbar

Optional Accessories

Integrated shutter

Non standard lengths

Various aperture types

Differential pumping

Autotuning unit

Viewport

Plasma monitor

Plasma Control

Ion Trap

Mounting
Mounting Flange

NW63CF (4.5 ")

Insertion Depth

309 mm

Performance
Spot Size

~23 mm at source

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