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ErLEED

The SPECS reverse LEED optics is based on 20 years of continuos develpment that lead to highly reliable and optimized instrument. Our optics are available on different mounting flanges DN100CF and DN150CF and with 3, or 4 grids. All optics are offered togehter with an analog power supply for LEED experiments only or a fully digital power supply for LEED/AES measurements. Furthermore, the ptics can be equipped with useful options such as an integrated retraction mechanism and a multi segment shutter.
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PUBLICATIONS

  1. (1998) Absolute Band Mapping by Combined Angle-Dependent Very-Low-Energy Electron Diffraction and Photoemission: Application to Cu

    We present an experimental method to determine the electronic E(k) band structure in crystalline solids absolutely, i.e., with complete control of the three-dimensional wave vector k. Angle-dependent very-low-energy electron diffraction is first applied to determine the unoccupied states whose k is located on a high-symmetry line parallel to the surface. Photoemission via these states, employing the constant-final-state mode, is then utilized to map the valence bands along this line. We demonstrate the method by application to Cu, and find significant deviation from free-electron-like behavior in the unoccupied states, and from density-functional theory in the occupied states.



    V. N. Strocov, R. Claessen, G. Nicolay, S. Hüfner, A. Kimura, A. Harasawa, S. Shin, A. Kakizaki, P. O. Nilsson, H. I. Starnberg, P. Blaha
    Phys. Rev. Lett. 81 (22), pp. 4943ff.
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  2. (1996) Electrostatic ray-tracing calculations in VLEED

    The present ray-tracing scheme employs the electrostatic potential calculation by finite-difference solution of the Laplace equation in three dimensions. The run time reduction, achieved by using successively refined grids and optimizing the iteration cycle, allows one to perform calculations on a personal computer. The code is applied to a standard four-grid LEED optics, operated in the retarding field mode, to calculate electron trajectories in the case of off-symmetry incidence. In particular, dependences of incidence on the sample rotation and primary energy are calculated. A simple empirical formula is derived, which allows accurate experimental determination of without extensive calculations. Ray-tracing calculations are further applied to analyse the influence of residual asymmetries of the electron optics.



    V.N. Strocov
    Meas. Sci. Technol. 7, pp. 1636-1642
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  3. (2000) Three-dimensional band mapping by angle-dependent very-low-energy electron diffraction and photoemission: Methodology and application to Cu

    A method of band mapping providing full control of the three-dimensional k is described in detail. Angle-dependent very-low-energy electron diffraction is applied to determine the photoemission final states along a Brillouin zone symmetry line parallel to the surface; photoemission out of these states is then utilized to map the valence bands in the constant-final-state mode. The method naturally incorporates the non-free-electron and excited-state self-energy effects in the unoccupied band, resulting in an accuracy superior over conventional techniques. Moreover, its intrinsic accuracy is less limited by lifetime broadening. As a practical advantage, the method provides access to a variety of lines in the Brillouin zone using only one crystal surface. We extensively tested the method on Cu. Several new aspects of the electronic structure of this metal are determined, including non-free-electron behavior of unoccupied bands and missing pieces of the valence band.



    V.N. Strocov, R. Claessen, G. Nicolay, S. Hüfner, A. Kimura, A. Harasawa, S. Shin, A. Kakizaki, P. O. Nilsson, H. I. Starnberg, P. Blaha
    Phys. Rev. B. 63, 205108 ff.
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